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Sic diode anode cathode1/27/2024 ![]() Schottky (metal such as aluminum, titanium, copper, or gold), on the other hand, is a rectifying-contact formed when the metal (anode) is placed on a semiconductor (cathode) with a different work function, which as a result, creates a barrier height between them producing a nonlinear I- V curve. The latter (ohmic contacts), such as gallium arsenide, Silicon, or gallium nitride, emits a linear current-voltage ( I- V) relation, where the current is a non-rectified one with a constant conductance value. The Schottky diode is based on a metal-semiconductor contact that forms its anode and ohmic, respectively. Unlike the p-n junction diode, where the current transport is conveyed through the minority carriers, the Schottky diode is a majority-carrier device, which as a result offers a faster switching capability and does not suffer from a charge storage delay resulting in a lower transition time with an instantaneous voltage change across its terminals. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I- V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.Ĭross-section view of the fabricated SBDs and the GaN epilayers. DC, RF, and low frequency C- V measurement techniques and measurements to characterize the diodes are outlined. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. The small signal equivalent circuit of the Schottky-contact diode is presented. ![]() A series resistance analysis of the diode studied in this project is discussed. ![]() The paper begins with a brief outline of the basic Schottky-contact diode operation. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a V BV of (V BV > 30 V) and an I R of (I R < 38 μA/mm), respectively. mm), as a result of lowering the Schottky barrier height, Φ n, when compared to conventional lateral SBDs.The developed technology offers a reduction of 37% in onset voltage, V ON (from 1.34 to 0.84 V), and 36% in ON-resistance, R ON (1.52 to 0.97 to Ω This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q
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